Long-wavelength VCSELs with AlGaAsSb/AlAsSb Bragg mirrors lattice-matched on InP substrates

被引：0

作者：

Almuneau, G ^{[1
]}

Hall, EM ^{[1
]}

Nakagawa, S ^{[1
]}

Kim, JK ^{[1
]}

Coldren, LA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS IV | 2000年 / 3946卷

关键词：

LW-VCSEL; optical communications; optical data interconnects; antimonides; thermal properties; Molecular Beam Epitaxy; InP;

D O I：

10.1117/12.384360

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The characterization of 1.55 mu m room temperature (RT) electrically pumped monolithic vertical cavity surface emitting lasers (VCSELs) on InP is reported. By combining high refractive index-contrast AlGaAsSb/AlAsSb distributed Bragg mirrors (DBRs) and Esaki-junction-based active region, these results demonstrate that VCSELs operating at 1.55 mu m and employing a reasonable number of mirror periods can be grown in a single epitaxial step. Regarding our first results with the same type of structure(1), some improvements have been achieved on the threshold current density (approximate to 1 kA/cm(2)), and on the voltage drop in the DBRs. We also present in this paper the thermal conductivity of the As-Sb materials measured on both bulk layers and DBR stacks. The main performance-limiting factor appears to be the combination between the low thermal conduction of the quaternary alloys lattice-matched to hip, and the high energy-band offset between the high- and the low-index materials.

引用

页码：48 / 56

页数：9

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