Surface enhanced Raman effect on CVD growth of WS2 film

被引:18
作者
Meng, Lan [1 ,2 ,3 ]
Hu, Song [1 ,2 ,3 ]
Xu, Chaoji [1 ,2 ,3 ]
Wang, Xiangfu [1 ,2 ,3 ]
Li, Heng [4 ,5 ]
Yan, Xiaohong [1 ,2 ,3 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Jiangsu, Peoples R China
[3] Key Lab Radio Frequency & Micronano Elect Jiangsu, Nanjing 210023, Jiangsu, Peoples R China
[4] Xiamen Univ, Jiujiang Res Inst, Jiujiang 332000, Peoples R China
[5] Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Fujian Prov Key Lab Semicond & Applicat, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
SCATTERING; SUBSTRATE; GRAPHENE; NUMBER;
D O I
10.1016/j.cplett.2018.07.040
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Chemical vapor deposition (CVD) method was used to grow large area and layer controllable WS2 film. Our results show that the as grown WS2 film is an excellent substrate for surface enhanced Raman scattering (SERS). The Raman enhancement effect depends crucially on the layer number of WS2 film: monolayer WS2 offers the strongest Raman signal, and the Raman enhancement effect gradually decreases with the increase in the layer number of WS2 . Further analysis indicates that this transition originates from the charge transfer yield between the R6G molecules and the underlying WS2 substrate. (C) 2018 Published by Elsevier B.V.
引用
收藏
页码:71 / 74
页数:4
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