An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN

被引:82
作者
Aïchoune, N [1 ]
Potin, V [1 ]
Ruterana, P [1 ]
Hairie, A [1 ]
Nouet, G [1 ]
Paumier, E [1 ]
机构
[1] Inst Sci Mat & Rayonnement, LERMAT, UPRESA 6004 CNRS, F-14050 Caen, France
关键词
Stillinger-Weber potential; energy; GaN; planar defect;
D O I
10.1016/S0927-0256(00)00056-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Stillinger-Weber potential has been parametrized for GaN with bond-type dependent parameters to allow efficient atomic simulations of large systems containing wrong, dangling and extra bonds. The input data for the fit are the experimental elastic constants of wurtzite structure and wrong bond energies deduced from ab initio calculation. The potential in then applied to zincblende structure and to planar defects. The predicted values an compared to experimental observation and previous computations. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:380 / 383
页数:4
相关论文
共 11 条
[1]   ANTIPHASE BOUNDARIES IN SEMICONDUCTING COMPOUNDS [J].
HOLT, DB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (06) :1297-&
[2]   Stillinger-Weber potentials for III-V compound semiconductors and their application to the critical thickness calculation for InAs/GaAs [J].
Ichimura, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 153 (02) :431-437
[3]   EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].
KEATING, PN .
PHYSICAL REVIEW, 1966, 145 (02) :637-&
[4]  
Kim K, 1996, MATER RES SOC SYMP P, V395, P399
[5]   ELASTIC-CONSTANTS AND PHONON FREQUENCIES OF SI CALCULATED BY A FAST FULL-POTENTIAL LINEAR-MUFFIN-TIN-ORBITAL METHOD [J].
METHFESSEL, M .
PHYSICAL REVIEW B, 1988, 38 (02) :1537-1540
[6]   Inversion domain and stacking mismatch boundaries in GaN [J].
Northrup, JE ;
Neugebauer, J ;
Romano, LT .
PHYSICAL REVIEW LETTERS, 1996, 77 (01) :103-106
[7]   Elastic constants of gallium nitride [J].
Polian, A ;
Grimsditch, M ;
Grzegory, I .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) :3343-3344
[8]  
POTIN V, 1997, J APPL PHYS, V82, P1276
[9]   COMPUTER-SIMULATION OF LOCAL ORDER IN CONDENSED PHASES OF SILICON [J].
STILLINGER, FH ;
WEBER, TA .
PHYSICAL REVIEW B, 1985, 31 (08) :5262-5271
[10]  
SVERDLOV BN, 1995, APPL PHYS LETT, V67, P3064