Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy

被引：19

作者：

Zheng, Gaolin ^{[1
]}

Wang, Jun ^{[1
]}

Liu, Xianglin ^{[1
]}

Yang, Anli ^{[1
]}

Song, Huaping ^{[1
]}

Guo, Yan ^{[1
]}

Wei, Hongyuan ^{[1
]}

Jiao, Chunmei ^{[1
]}

Yang, Shaoyan ^{[1
]}

Zhu, Qinsheng ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 23期

基金：

美国国家科学基金会;

关键词：

MgO; Rutile; Band offset; X-ray photoelectron spectroscopy; Gate dielectric; Dye-sensitized solar cells; SENSITIZED SOLAR-CELLS; TITANIUM-DIOXIDE; SIO2/SI SYSTEM; OXIDE; MGO; EFFICIENCY; SURFACES; FILMS; PHOTOCATALYSIS; ENHANCEMENT;

D O I：

10.1016/j.apsusc.2010.05.074

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The valence band offset (VBO) of MgO/TiO2 (rutile) heterojunction has been directly measured by Xray photoelectron spectroscopy. The VBO of the heterojunction is determined to be 1.6 +/- 0.3 eV and the conduction band offset (CBO) is deduced to be 3.2 +/- 0.3 eV, indicating that the heterojunction exhibits a type-I band alignment. These large values are sufficient for MgO to act as tunneling barriers in TiO2 based devices. The accurate determination of the valence and conduction band offsets is important for use of MgO as a buffer layer in TiO2 based field-effect transistors and dye-sensitized solar cells. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：7327 / 7330

页数：4

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