Sol-gel-derived c-axis oriented ZnO thin films

被引：334

作者：

Bao, DH ^{[1
]}

Gu, HS

Kuang, AX

机构：

[1] Xian Jiao Tong Univ, Elect Mat Res Lab, Xian 710049, Peoples R China

[2] Hubei Univ, Inst Piezoelect Ceram, Wuhan 430062, Peoples R China

来源：

THIN SOLID FILMS | 1998年 / 312卷 / 1-2期

关键词：

ZnO thin film; sol-gel; optical and electrical properties;

D O I：

10.1016/S0040-6090(97)00302-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

c-Axis oriented zinc oxide thin films were prepared by sol-gel process on fused quartz substrates. The structure, optical and electrical properties of ZnO films were investigated. Growth of the thin films strongly depends on heat-treatment conditions. The c-axis lattice constants of the thin films and the band gap are a little bigger than that of ZnO crystal. The differences between the thin film and crystal might be attributable to the grain boundaries and imperfections in thin films. (C) 1998 Elsevier Science S.A.

引用

页码：37 / 39

页数：3

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