A reference-less pH sensor based on an organic field effect transistor with tunable sensitivity

被引:31
作者
Spanu, A. [1 ]
Viola, F. [1 ]
Lai, S. [1 ]
Cosseddu, P. [1 ]
Ricci, P. C. [3 ]
Bonfiglio, A. [1 ,2 ]
机构
[1] Univ Cagliari, Dept Elect & Elect Engn, Piazza dArmi, I-09123 Cagliari, Italy
[2] CNR, Inst Nanosci, Via Campi 213-A, I-41125 Modena, Italy
[3] Univ Cagliari, Dept Phys, SP 8, I-09042 Cagliari, Italy
关键词
pH sensors; Organic Charge Modulated FET; High-sensitivity sensors; BUFFER CAPACITY; PARYLENE; VOLTAGE; SURFACE; DIELECTRICS; PROTEINS; ISFET; FILMS;
D O I
10.1016/j.orgel.2017.06.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Despite their great potentiality, ISFET-like devices generally suffer from an intrinsic limitation in sensitivity, the so-called Nernst limit. Moreover, the high costs, the restricted range of employable materials associated to the silicon technology, and the need for a reference electrode, have reduced the applicability of such devices in the bio-sensing field. In this work, we show how a reference-less pH sensor based on an organic semiconductor device, called Organic Charge-Modulated Field-Effect Transistor (OCMFET), besides being low cost, flexible, and transparent, shows a super-nernstian sensitivity with no need of any chemical modification of the sensing area. Moreover, thanks to its peculiar transduction principle and structure, the device sensitivity can be easily tuned by acting on geometry-related parameters of the device itself, introducing an interesting alternative approach for the realization of highly sensitive, reference-less, and low-cost devices for a wide range of bio-sensing applications. (C) 2017 Elsevier B. V. All rights reserved.
引用
收藏
页码:188 / 193
页数:6
相关论文
共 31 条
[31]   A NOVEL DESCRIPTION OF ISFET SENSITIVITY WITH THE BUFFER CAPACITY AND DOUBLE-LAYER CAPACITANCE AS KEY PARAMETERS [J].
VANHAL, REG ;
EIJKEL, JCT ;
BERGVELD, P .
SENSORS AND ACTUATORS B-CHEMICAL, 1995, 24 (1-3) :201-205