Magnetic susceptibility of semiconducting ReSi1.75

被引：4
作者：
Laborde, O
Sulpice, A
Gottlieb, U
Madar, R
机构：
[1] CNRS,CHAMPS MAGNET INTENSES LAB,F-38042 GRENOBLE 9,FRANCE
[2] ECOLE NATL SUPER PHYS GRENOBLE,INST NATL POLYTECH GRENOBLE,MAT & GENIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 05期
关键词：
semiconductors; quantum localisation; thermodynamic properties;
D O I：
10.1016/0038-1098(95)00690-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We measured the magnetic susceptibility of a single crystal of semiconducting ReSi1.75 with the magnetic field aligned along the three main crystallographic directions. The susceptibility of ReSi1.75 is strongly diamagnetic and anisotropic. Below 40 K, chi increases with decreasing temperature. We discuss the different contributions to the susceptibility of ReSi1.75 and we explain the low temperature behaviour of chi in analogy to the behaviour of a doped semiconductor near the metal-insulator transition.
引用
收藏
页码：323 / 327
页数：5
相关论文
共 11 条
[1]   THE MAGNETIC SUSCEPTIBILITY OF SEMICONDUCTORS [J].
BOWERS, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :206-211
[2]   STRUCTURAL AND ELECTRONIC TRANSPORT-PROPERTIES OF RESI2-DELTA SINGLE-CRYSTALS [J].
GOTTLIEB, U ;
LAMBERTANDRON, B ;
NAVA, F ;
AFFRONTE, M ;
LABORDE, O ;
ROUAULT, A ;
MADAR, R .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :3902-3907
[3]   MAGNETIC-SUSCEPTIBILITIES OF VSI2, NBSI2 AND TASI2 SINGLE-CRYSTALS [J].
GOTTLIEB, U ;
SULPICE, A ;
MADAR, R ;
LABORDE, O .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (46) :8755-8762
[4]  
GOTTLIEB U, IN PRESS APPL SURF S
[5]  
GOTTLIEB U, 1994, THESIS I NATIONAL PO
[6]   ELECTRICAL AND OPTICAL-PROPERTIES OF SILICIDE SINGLE-CRYSTALS AND THIN-FILMS [J].
NAVA, F ;
TU, KN ;
THOMAS, O ;
SENATEUR, JP ;
MADAR, R ;
BORGHESI, A ;
GUIZZETTI, G ;
GOTTLIEB, U ;
LABORDE, O ;
BISI, O .
MATERIALS SCIENCE REPORTS, 1993, 9 (4-5) :141-200
[7]   TEMPERATURE-DEPENDENCE OF THE MAGNETIC-SUSCEPTIBILITY OF A CRSI2 SINGLE-CRYSTAL [J].
OHSUGI, IJ ;
KOJIMA, T ;
NISHIDA, IA .
PHYSICAL REVIEW B, 1990, 42 (16) :10761-10764
[8]   STATIC MAGNETIC-SUSCEPTIBILITY OF SI-P ACROSS THE METAL-INSULATOR-TRANSITION [J].
OOTUKA, Y ;
MATSUNAGA, N .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1990, 59 (05) :1801-1809
[9]   SUSCEPTIBILITY OF SI-P ACROSS THE METAL-INSULATOR-TRANSITION .1. DIAMAGNETISM [J].
ROY, A ;
TURNER, M ;
SARACHIK, MP .
PHYSICAL REVIEW B, 1988, 37 (10) :5522-5530
[10]   MOLYBDENUM DISILICIDE - CRYSTAL-GROWTH, THERMAL-EXPANSION AND RESISTIVITY [J].
THOMAS, O ;
SENATEUR, JP ;
MADAR, R ;
LABORDE, O ;
ROSENCHER, E .
SOLID STATE COMMUNICATIONS, 1985, 55 (07) :629-632
12