Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer

被引：0

作者：

Tunc, T. ^{[1
]}

Dokme, I. ^{[2
]}

Altindal, S. ^{[3
]}

Uslu, I. ^{[4
]}

机构：

[1] Aksaray Univ, Fac Educ, Sci Educ Det, Aksaray, Turkey

[2] Gazi Univ, Fac Gazi Educ, Sci Educ Dept, Ankara, Turkey

[3] Gazi Univ, Fac Arts & Sci, Dept Phys, Ankara, Turkey

[4] Selcuk Univ, Fac Educ, Chem Educ Dept, Konya, Turkey

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 07期

关键词：

I-V characteristics; Ideality factor; Barrier height; Interface states; DIELECTRIC-PROPERTIES; HEIGHT; JUNCTION;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the forward bias 1 V characteristics were found strongly depend on temperature. The forward bias semi-logarithmic I-V curves for the different temperatures have an almost common cross-point at a certain bias voltage. While the value of n decreases, the Phi(Bo) increases with increasing temperature. Therefore, we attempted to draw a Phi(bo) vs q/2kT plot to obtain evidence of a Gaussian distribution of the barrier heights, and to calculate the values of mean barrier height and standard deviation at zero bias, respectively.

引用

页码：947 / 950

页数：4

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