Interferometric lithography - from periodic arrays to arbitrary patterns

被引:47
作者
Brueck, SRJ [1 ]
Zaidi, SH [1 ]
Chen, X [1 ]
Zhang, Z [1 ]
机构
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
关键词
D O I
10.1016/S0167-9317(98)00032-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Interferometric lithography is a simple technology for the production of very small features. Using I-line wavelength laser sources (364-Mm Ar-ion or 355-nm tripled. YAG lasers) dense (1:1 line:space ratio) periodic structures at 0.125-mu m have been demonstrated. Mix-and-match with optical lithography has been demonstrated. Imaging interferometric lithography, a true integration between optical and interferometric lithographies, potentially provides a route to arbitrary structures with a resolution up to 130 mm (dense patterns) at I-line and 65 nm at a 193 nm exposure wavelength.
引用
收藏
页码:145 / 148
页数:4
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