The study of effective work function modulation by as ion implantation in TiN/TaN/HfO2 stacks

被引：15

作者：

Singanamalla, Raghunath

Yu, Hong Yu

Janssens, Tom

Kubicek, Stefan

De Meyer, Kristin

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

[2] Univ Louvain, Dept Elect Engn, B-3001 Louvain, Belgium

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 12-16期

关键词：

metal gate; HfO2; work function; TaN; As; flatband voltage; SIMS;

D O I：

10.1143/JJAP.46.L320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact on the metal gate effective work function (EWF) of As ion implantation through TiN/TaN/HfO2 gate stack was investigated. An As implantation at 20KeV reduces the flat-band voltage (V-FB) for TiN/TaN/HfO2 capacitors (or equivalently reduces the EWF) by a maximum of 600mV at a dose of 5x10(15)cm(-2). This V-FB reduction is correlated to the As pile-up at the TaN-HfO2 interface, as evidenced by a secondary ion mass spectroscopy (SIMS) study. The As ion accumulation at the interface of the gate electrode-dielectric interface is suggested to induce an interface dipole, contributing to the observed phenomena.

引用

页码：L320 / L322

页数：3

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