Effect of thermal annealing time on optical and structural properties of TeO2 thin films

被引:22
作者
Siciliano, T. [1 ]
Di Giulio, M. [1 ]
Tepore, M. [1 ]
Filippo, E. [1 ]
Micocci, G. [1 ]
Tepore, A. [1 ]
机构
[1] Univ Salento, Dipartimento Sci Mat, I-73100 Lecce, Italy
关键词
Thin films; Optical properties; Tellurium oxide; OXYGEN-OCTAHEDRA FERROELECTRICS; ELECTRICAL-CONDUCTIVITY; TELLURIUM OXIDE; ABSORPTION; CONSTANTS;
D O I
10.1016/j.vacuum.2009.12.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
TeO2 thin films were deposited on quartz substrates by rf reactive sputtering technique from a Te metal target. The obtained samples were annealed in an argon atmosphere at 450 degrees C for different annealing times up to 90 min. X-ray diffraction studies revealed that the as-grown samples were amorphous and there was no appreciable change in structure for a short annealing time. Thin films became polycrystalline with the tetragonal (alpha-phase) structure of tellurium dioxide crystal with the increase of the thermal annealing time. The refractive index and optical energy gap of the films were calculated by modelling transmittance spectra. The optical energy gap decreased continuously from 3.83 eV to 3.71 eV with increasing thermal annealing time. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:935 / 939
页数:5
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