Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

被引：60

作者：

Sun, Huarui ^{[1
]}

Pomeroy, James W. ^{[1
]}

Simon, Roland B. ^{[1
]}

Francis, Daniel ^{[2
]}

Faili, Firooz ^{[2
]}

Twitchen, Daniel J. ^{[2
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, Ctr Device Thermog & Reliabil, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Element Six Technol, Santa Clara, CA 95054 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

GaN-on-diamond; HEMT; reliability; thermal resistance; temperature dependence; BOUNDARY RESISTANCE; ALGAN/GAN HEMTS; CONDUCTIVITY; FILMS; GRAIN;

D O I：

10.1109/LED.2016.2537835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 degrees C to 250 degrees C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.

引用

页码：621 / 624

页数：4

共 25 条

[1] Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties [J].

Anaya, Julian ;

Rossi, Stefano ;

Alomari, Mohammed ;

Kohn, Erhard ;

Toth, Lajos ;

Pecz, Bela ;

Hobart, Karl D. ;

Anderson, Travis J. ;

Feygelson, Tatyana I. ;

Pate, Bradford B. ;

Kuball, Martin .

ACTA MATERIALIA, 2016, 103 :141-152

[2] Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires [J].

Anaya, Julian ;

Rossi, Stefano ;

Alomari, Mohammed ;

Kohn, Erhard ;

Toth, Lajos ;

Pecz, Bela ;

Kuball, Martin .

APPLIED PHYSICS LETTERS, 2015, 106 (22)

[3] Thermal transport and grain boundary conductance in ultrananocrystalline diamond thin films [J].

Angadi, Maki A. ;

Watanabe, Taku ;

Bodapati, Arun ;

Xiao, Xingcheng ;

Auciello, Orlando ;

Carlisle, John A. ;

Eastman, Jeffrey A. ;

Keblinski, Pawel ;

Schelling, Patrick K. ;

Phillpot, Simon R. .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)

[4] Thermal Characterization of Si3N4 Thin Films Using Transient Thermoreflectance Technique [J].

Bai, Suyuan ;

Tang, Zhenan ;

Huang, Zhengxing ;

Yu, Jun .

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2009, 56 (08) :3238-3243

[5]

Blevins J.D., 2014, Int. Conf. Compd. Semicond. Manuf. Technol, P105

[6] Phonon scattering in strained transition layers for GaN heteroepitaxy [J].

Cho, Jungwan ;

Li, Yiyang ;

Hoke, William E. ;

Altman, David H. ;

Asheghi, Mehdi ;

Goodson, Kenneth E. .

PHYSICAL REVIEW B, 2014, 89 (11)

[7] Optical, thermal and mechanical properties of CVD diamond [J].

Coe, SE ;

Sussmann, RS .

[8] AlGaN/GaN HEMTs on diamond substrate with over 7W/mm output power density at 10 GHz [J].

Dumka, D. C. ;

Chou, T. M. ;

Faili, F. ;

Francis, D. ;

Ejeckam, F. .

ELECTRONICS LETTERS, 2013, 49 (20) :1298-U88

[9]

Dumka D.C., 2013, IEEE 2013, Compound Semiconductor Integrated Circuit Symposium (CSICS), P1, DOI DOI 10.1109/CSICS.2013.6659225

[10]

Dumka DC, 2014, INTSOC CONF THERMAL, P1210, DOI 10.1109/ITHERM.2014.6892418

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