First-principles study of electronic structure and thermoelectric properties of p-type XIrSb(X = Ti, Zr and Hf) half-Heusler compounds

被引:20
作者
Bamgbose, Muyiwa K. [1 ]
机构
[1] Augustine Univ, Dept Phys, Lagos, Nigeria
关键词
First-principle; Electronic; Thermometric; Half-Heusler; Compounds; High-Performance; PHASE-STABILITY; PREDICTION; DISCOVERY; BANPO3;
D O I
10.1016/j.mssp.2021.105792
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work reports First-principle Density Functional Theory(DFT) calculation of structural, electronic, and thermoelectric properties of p-type XIrSb(X = Ti, Zr and Hf) half-Heusler compounds. Generalized Gradient Approximation(GGA) with Perdew-Burke-Ernzerhof parameterization flavour for solids (PBEsol) is used for exchange-correlation potential functional. Spin-orbit coupling(SOC) is included in the calculations. The highest value of electronic fitness function(EFF) at 800 K with SOC are 0.83 x 10(-19) W-5/3 ms(-1/3) K-2, 1.11 x 0(-19) W-5/3 ms(-1/3) K-2 and 1.10 x 0(-19) W-5/3 ms(-1/3) K-2 for TiIrSb, ZrIrSb and HfIrSb respectively. The figure of merit(ZT) obtained at 800 K with SOC are 0.87, 0.95 and 0.90 for TiIrSb, ZrIrSb and HfIrSb respectively. The values EFF and ZT of p-type XIrSb(X = Ti, Zr and Hf) obtained in this work show that these compounds are high-performance thermoelectric materials.
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页数:7
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