Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors

被引：95

作者：

Yang, Yajie ^{[1
]}

Jeon, Jaeho ^{[1
]}

Park, Jin-Hong ^{[1
]}

Jeong, Mun Seok ^{[2
]}

Lee, Byoung Hun ^{[3
]}

Hwang, Euyheon ^{[1
,4
]}

Lee, Sungjoo ^{[1
,4
]}

机构：

[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea

[3] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwangju 500712, South Korea

[4] Sungkyunkwan Univ, Dept Nano Engn, Suwon 440746, South Korea

来源：

ACS NANO | 2019年 / 13卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

MXene; InSe; avalanche photodetector; plasmonic effect; 2-dimensional material; MOS2; TI2CTX; MXENE;

D O I：

10.1021/acsnano.9b01941

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate the application of MXenes, metallic 2D materials of transition-metal carbides, as excellent electrode materials for photonic devices. In this study, we have fabricated an InSe-based photodetector with a Ti2CTx electrode. The photodetector with few-layer, atomically thin, Ti2CTx (MXene) electrodes shows the avalanche carrier multiplication effect, which leads to high device performance. To improve the performance of the InSe/Ti2CTx avalanche photodetector, we can pattern Ti2CTx into nanoribbon arrays (a plasmonic grating structure), which enhances light absorption of the photodetector. The plasmonic InSe/Ti2CTx avalanche photodetector exhibits low dark current (3 nA), high responsivity (1 X 10(5) AW(-1)), and high detectivity (7.3 X 10(12) Jones).

引用

页码：8804 / 8810

页数：7

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