Physical vapor growth of organic semiconductors

被引：595

作者：

Laudise, RA ^{[1
]}

Kloc, C ^{[1
]}

Simpkins, PG ^{[1
]}

Siegrist, T ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 187卷 / 3-4期

关键词：

vapor growth; organic semiconductor; alpha-6T; alpha-4T; alpha-8T; pentacene; anthracene; copper phthalocyanine;

D O I：

10.1016/S0022-0248(98)00034-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Physical vapor growth in horizontal and vertical systems has been used to grow crystals of a-hexathiophene (alpha-6T), alpha-octithiophene (alpha-8T), alpha-quaterthiophene (alpha-4T), pentacene, anthracene and copper phthalocyanine. Using 10-30 mg of starting material, mm-cm sized crystals, suitable for characterization measurements, have been grown. New polymorphs of alpha-quaterthiophene (high temperature, HT and low temperature, LT) and pentacene were discovered. A horizontal geometry is shown to be advantageous because the fragile crystals are extracted more easily. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：449 / 454

页数：6

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