High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

被引:198
作者
Wang, Xiaoxue [1 ]
Zhang, Xu [2 ]
Sun, Lei [3 ]
Lee, Dongwook [4 ]
Lee, Sunghwan [5 ]
Wang, Minghui [1 ]
Zhao, Junjie [1 ]
Shao-Horn, Yang [4 ,6 ,7 ]
Dinca, Mircea [3 ]
Palacios, Tomas [2 ]
Gleason, Karen K. [1 ]
机构
[1] MIT, Dept Chem Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[3] MIT, Dept Chem, Cambridge, MA 02139 USA
[4] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[5] Baylor Univ, Dept Mech Engn, Waco, TX 76798 USA
[6] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[7] MIT, Res Lab Elect, Cambridge, MA 02139 USA
关键词
CHARGE-TRANSPORT; POLY 3,4-ETHYLENEDIOXYTHIOPHENE; POLY(3,4-ETHYLENEDIOXYTHIOPHENE); ENHANCEMENT; MECHANISM;
D O I
10.1126/sciadv.aat5780
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption. We demonstrate that the key to addressing these limitations is tomolecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin filmswith a record-high electrical conductivity of 6259 S/cm and a remarkably high carriermobility of 18.45 cm(2) V-(1) s(-1) by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56 MHz for radio frequency identification (RFID) readers, demonstratingwafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.
引用
收藏
页数:9
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