Broadband external cavity tunable quantum dot lasers with low injection current density

被引：29

作者：

Lv, X. Q. ^{[1
]}

Jin, P. ^{[1
]}

Wang, W. Y. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 09期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; NM TUNING RANGE; SUPERLUMINESCENT DIODES; WELL LASER; EMISSION; SPECTROSCOPY; SPECTRUM;

D O I：

10.1364/OE.18.008916

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device. (C) 2010 Optical Society of America

引用

页码：8916 / 8922

页数：7

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