Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling

被引:46
作者
Dai, Jingru [1 ]
Li, Jianfeng [1 ]
Agyakwa, Pearl [1 ]
Corfield, Martin [1 ]
Johnson, Christopher Mark [1 ]
机构
[1] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England
基金
英国工程与自然科学研究理事会;
关键词
High lead solder joint; power cycling; sintered nanosilver joint; thermal impedance and microstructures; METALLOORGANIC NANOPARTICLES; TEMPERATURE; PASTE; RELIABILITY; ELECTRONICS; TECHNOLOGY; BEHAVIOR; DEVICES;
D O I
10.1109/TDMR.2018.2825386
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
13.5 mm x 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepared at 250 degrees C and a pressure of 10 MPa for 5 min and compared with Pb5Sn solder joint die attachments under constant current power cycling with an initial temperature swing of 50 degrees C-175 degrees C. Both effective thermal resistance and microstructural evolution of the samples were monitored using transient thermal impedance measurement and nondestructive X-ray computed tomography at regular power cycling intervals. The results showed a gradual increase in the effective thermal resistance of the Pb5Sn solder joints from 0.047 to 0.133 K/W from zero to 41k power cycles, followed by a rapid escalation to 0.5018 K/W at 52k cycles. This was accompanied with the formation and development of oblique cracks within the Pb5Sn die attachments until delamination occurred at the solder/device and solder/substrate interfaces. By contrast, the effective thermal resistance of the sintered Ag joints remained almost constant at 0.040 K/W up to 116k power cycles. This was explained in terms of thermally induced continuation of densification of the sintered structure and the formation and development of networked vertical cracks within the sintered Ag die attachments, some of which further extended into the Cu tracks of the AlN substrate.
引用
收藏
页码:256 / 265
页数:10
相关论文
共 34 条
[21]   High temperature ratcheting behavior of nano-silver paste sintered lap shear joint under cyclic shear force [J].
Li, Xin ;
Chen, Gang ;
Chen, Xu ;
Lu, Guo-Quan ;
Wang, Lei ;
Mei, Yun-Hui .
MICROELECTRONICS RELIABILITY, 2013, 53 (01) :174-181
[22]   Materials and processes for implementing high-temperature liquid interconnects [J].
Mannan, SH ;
Clode, MP .
IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2004, 27 (03) :508-514
[23]   Transient Liquid Phase Die Attach for High-Temperature Silicon Carbide Power Devices [J].
Mustain, Habib A. ;
Brown, William D. ;
Ang, Simon S. .
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2010, 33 (03) :563-570
[24]   Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications [J].
Navarro, Luis A. ;
Perpina, Xavier ;
Godignon, Philippe ;
Montserrat, Josep ;
Banu, Viorel ;
Vellvehi, Miquel ;
Jorda, Xavier .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) :2261-2271
[25]   Temperature Cycling Reliability of High-Temperature Lead-Free Die-Attach Technologies [J].
Quintero, Pedro O. ;
McCluskey, F. Patrick .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2011, 11 (04) :531-539
[26]   ON THE REPRESENTATION OF INFINITE-LENGTH DISTRIBUTED RC ONE-PORTS [J].
SZEKELY, V .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1991, 38 (07) :711-719
[27]   A new evaluation method of thermal transient measurement results [J].
Szekely, V .
MICROELECTRONICS JOURNAL, 1997, 28 (03) :277-292
[28]   Synthesis of Au-Sn alloy nanoparticles for lead-free electronics with unique combination of low and high melting temperatures [J].
Tabatabaei, Salomeh ;
Kumar, Ashavani ;
Ardebili, Haleh ;
Loos, Peter J. ;
Ajayan, Pulickel M. .
MICROELECTRONICS RELIABILITY, 2012, 52 (11) :2685-2689
[29]  
Weber C, 2015, ELEC COMP C, P1866, DOI 10.1109/ECTC.2015.7159854
[30]  
Wereszczak A.A., 2012, P 7 INT C INT POW EL, P1