An ultralow stress Ta4B absorber for x-ray masks

被引：10
作者：
Shoki, T
Ohkubo, R
Sakurai, T
Kawahara, T
Annaka, N
Yabe, H
Aya, S
机构：
[1] HOYA Corp, R&D Ctr, Tokyo 196, Japan
[2] HOYA Corp, Electroopt Co, Yamanashi 40916, Japan
[3] Mitsubishi Elect Co, Adv Technol R&D Ctr, Amagasaki, Hyogo 661, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 12B期
关键词：
X-ray mask; absorber; Ta4B; stress; stress uniformity; annealing; etching;
D O I：
10.1143/JJAP.36.7586
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The stress controllability, stress uniformity, stress stability and dry etching characteristics of Ta4B films deposited by an in-line type sputtering system were investigated in detail. Low average stress Ta4B films within +/-10 MPa have been fabricated on polished SIC films that demonstrate excellent reproducibility by step annealing. Stress uniformity of the film showed an approximate range of 7 MPa on a Si wafer in a 30 mm square area when the deposition conditions were modified. The Ta4B him demonstrated long-term stress stability and excellent resistance to the acid and water used in the cleaning process. The Ta4B film also ensures fine pattern formations below 0.2 mu m.
引用
收藏
页码：7586 / 7590
页数：5
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