Optimization of titanium nitride rapid thermal CVD process

被引：0

作者：

de Baynast, H ^{[1
]}

Bouteville, A ^{[1
]}

Remy, JC ^{[1
]}

机构：

[1] CER Angers, ENSAM, Equipe Genie Procedes, Lab Procedes Mat Instrumentat, F-49035 Angers, France

来源：

CHEMICAL VAPOR DEPOSITION | 2000年 / 6卷 / 03期

关键词：

CVD; TiN; film growth; microelectronics; mechanical applications;

D O I：

10.1002/(SICI)1521-3862(200006)6:3<115::AID-CVDE115>3.0.CO;2-G

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Anomalous behavior during TiN growth through rapid thermal low-pressure chemical vapor deposition (RTLPCVD) from gas phase TiCl4-NH3-H-2 has been observed. Two deposition temperatures are used (500 degrees C and 800 degrees C) and two types of deposition process are defined (a long one-step process, and a multiple-step process). Resistivity, structure, composition, and growth behavior are examined and discussed in terms of oxygen contamination and classical nucleation theory. The long one step process is better for mechanical applications, whereas the multiple-step process is more suitable for microelectronics.

引用

页码：115 / 119

页数：5

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