Optimization of titanium nitride rapid thermal CVD process

Anomalous behavior during TiN growth through rapid thermal low-pressure chemical vapor deposition (RTLPCVD) from gas phase TiCl4-NH3-H-2 has been observed. Two deposition temperatures are used (500 degrees C and 800 degrees C) and two types of deposition process are defined (a long one-step process, and a multiple-step process). Resistivity, structure, composition, and growth behavior are examined and discussed in terms of oxygen contamination and classical nucleation theory. The long one step process is better for mechanical applications, whereas the multiple-step process is more suitable for microelectronics.