Epitaxial Phase Change Materials: Growth and Switching of Ge2Sb2Te5 on GaSb(001)

被引：0
|
作者：
Braun, Wolfgang [1 ]
Shayduk, Roman [1 ]
Flissikowski, Timur [1 ]
Grahn, Holger T. [1 ]
Riechert, Henning [1 ]
Fons, Paul [2 ]
Kolobov, Alex [2 ]
机构：
[1] Paul Drude Inst Solid State Elect, Berlin, Germany
[2] Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki, Japan
来源：
MATERIALS AND PHYSICS FOR NONVOLATILE MEMORIES | 2009年 / 1160卷
基金：
日本科学技术振兴机构;
关键词：
MEMORY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial Ge2Sb2Te5 has been successfully grown on GaSb(001) by molecular beam epitaxy. The films show a tendency for void formation and rough morphology, but at the same time a very strong epitaxial orientation, cubic structure and a sharp interface to the substrate. The layers can be reversibly switched between the crystalline and amorphous phases using short laser pulses.
引用
收藏
页码：177 / +
页数：2
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