Epitaxial Phase Change Materials: Growth and Switching of Ge2Sb2Te5 on GaSb(001)

被引：0

作者：

Braun, Wolfgang ^{[1
]}

Shayduk, Roman ^{[1
]}

Flissikowski, Timur ^{[1
]}

Grahn, Holger T. ^{[1
]}

Riechert, Henning ^{[1
]}

Fons, Paul ^{[2
]}

Kolobov, Alex ^{[2
]}

机构：

[1] Paul Drude Inst Solid State Elect, Berlin, Germany

[2] Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki, Japan

来源：

MATERIALS AND PHYSICS FOR NONVOLATILE MEMORIES | 2009年 / 1160卷

基金：

日本科学技术振兴机构;

关键词：

MEMORY;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial Ge2Sb2Te5 has been successfully grown on GaSb(001) by molecular beam epitaxy. The films show a tendency for void formation and rough morphology, but at the same time a very strong epitaxial orientation, cubic structure and a sharp interface to the substrate. The layers can be reversibly switched between the crystalline and amorphous phases using short laser pulses.

引用

页码：177 / +

页数：2

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