Epitaxial Phase Change Materials: Growth and Switching of Ge2Sb2Te5 on GaSb(001)

被引：0
|
作者：
Braun, Wolfgang [1 ]
Shayduk, Roman [1 ]
Flissikowski, Timur [1 ]
Grahn, Holger T. [1 ]
Riechert, Henning [1 ]
Fons, Paul [2 ]
Kolobov, Alex [2 ]
机构：
[1] Paul Drude Inst Solid State Elect, Berlin, Germany
[2] Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki, Japan
来源：
MATERIALS AND PHYSICS FOR NONVOLATILE MEMORIES | 2009年 / 1160卷
基金：
日本科学技术振兴机构;
关键词：
MEMORY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial Ge2Sb2Te5 has been successfully grown on GaSb(001) by molecular beam epitaxy. The films show a tendency for void formation and rough morphology, but at the same time a very strong epitaxial orientation, cubic structure and a sharp interface to the substrate. The layers can be reversibly switched between the crystalline and amorphous phases using short laser pulses.
引用
收藏
页码：177 / +
页数：2
相关论文
共 50 条
  • [1] Epitaxial growth and structure of Ge-Sb-Te phase change materials on GaSb
    Shayduk, Roman
    Katmis, Ferhat
    Braun, Wolfgang
    Riechert, Henning
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03):
  • [2] Phase change mechanisms in Ge2Sb2Te5
    Privitera, S.
    Lombardo, S.
    Bongiorno, C.
    Rimini, E.
    Pirovano, A.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (01)
  • [3] Observation of T2-like coherent optical phonons in epitaxial Ge2Sb2Te5/GaSb(001) films
    Shalini, A.
    Liu, Y.
    Al-Jarah, U. A. S.
    Srivastava, G. P.
    Wright, C. D.
    Katmis, F.
    Braun, W.
    Hicken, R. J.
    SCIENTIFIC REPORTS, 2013, 3
  • [4] Observation of T2-like coherent optical phonons in epitaxial Ge2Sb2Te5/GaSb(001) films
    A. Shalini
    Y. Liu
    U.A.S. Al-Jarah
    G. P. Srivastava
    C. D. Wright
    F. Katmis
    W. Braun
    R. J. Hicken
    Scientific Reports, 3
  • [5] A layered Ge2Sb2Te5 phase change material
    Zhang, Bo
    Cicmancova, Veronika
    Kupcik, Jaroslav
    Slang, Stanislav
    Pereira, Jhonatan Rodriguez
    Svoboda, Roman
    Kutalek, Petr
    Wagner, Tomas
    NANOSCALE, 2020, 12 (05) : 3351 - 3358
  • [6] Coherent gigahertz phonons in Ge2Sb2Te5 phase-change materials
    Hase, Muneaki
    Fons, Paul
    Kolobov, Alexander V.
    Tominaga, Junji
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (48)
  • [7] Microstructure and crystallization kinetics of Ge2Sb2Te5–Sn phase change materials
    Qixun Yin
    Leng Chen
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 16523 - 16533
  • [8] Optical switching and related structural properties of epitaxial Ge2Sb2Te5 films
    Gericke, F.
    Flissikowski, T.
    Laehnemann, J.
    Katmis, F.
    Braun, W.
    Riechert, H.
    Grahn, T.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (11)
  • [9] Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material
    Singh, Gurinder
    Kaura, Aman
    Mukul, Monika
    Singh, Janpreet
    Tripathi, S. K.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 117 (03): : 1307 - 1314
  • [10] Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material
    Gurinder Singh
    Aman Kaura
    Monika Mukul
    Janpreet Singh
    S. K. Tripathi
    Applied Physics A, 2014, 117 : 1307 - 1314
12345