Single source precursors for fabrication of I-III-VI2 thin-film solar cells via spray CVD

被引：75

作者：

Hollingsworth, JA

Banger, KK

Jin, MHC

Harris, JD

Cowen, JE

Bohannan, EW

Switzer, JA

Buhro, W

Hepp, AF

机构：

[1] NASA, Glenn Res Ctr, Photovolta & Space Environm Branch, Cleveland, OH 44135 USA

[2] Washington Univ, Dept Chem, St Louis, MO 63130 USA

[3] Ohio Aerosp Inst, Cleveland, OH 44142 USA

[4] Cleveland State Univ, Dept Chem, Cleveland, OH 44115 USA

[5] Univ Missouri, Dept Chem, Rolla, MO 65409 USA

来源：

THIN SOLID FILMS | 2003年 / 431卷

关键词：

chemical vapour deposition; chalcopyrite; thin-film technology; solar cells;

D O I：

10.1016/S0040-6090(03)00196-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors can be used in either a hot, or cold-wall spray chemical vapour deposition reactor, for depositing CuInS2, CuGaS2 and CuGaInS2 at reduced temperatures (400-450 degreesC), which display good electrical and optical properties suitable for photovoltaic devices. X-ray diffraction studies, energy dispersive spectroscopy and scanning electron microscopy confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：63 / 67

页数：5

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