Magnetic properties of (Ga, Mn) As (110) epitaxial films

被引：1

作者：

Ma, Jialin ^{[1
]}

Wang, Hailong ^{[1
]}

Yu, Zhifeng ^{[1
]}

Wang, Xiaolei ^{[1
]}

Zhao, Jianhua ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China

来源：

EPL | 2017年 / 118卷 / 01期

关键词：

ATOMIC LAYERS; MANIPULATION; ANISOTROPY; (GA; MN)AS;

D O I：

10.1209/0295-5075/118/17003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Magnetic properties of (Ga, Mn) As films epitaxied on GaAs (110) substrates have been investigated. Both magnetic and magnetotransport measurements indicate dominant inplane magnetic anisotropies for as-grown and annealed samples. Moreover, obvious in-plane spin reorientation transition upon the change of temperature has been observed for the as-grown samples, which disappears after annealing. The above phenomena are shown to be correlated with the competition between the cubic and the uniaxial magnetic anisotropic fields. The relative strengths of these two terms are quantitatively obtained by the planar Hall measurements and can be tuned by annealing. For all the annealed (Ga, Mn) As (110) films, a dominant [-110] uniaxial magnetic easy axis is found and the mechanism is discussed. Our work provides useful information for understanding the origin of magnetic anisotropies in (Ga, Mn) As films. Copyright (C) EPLA, 2017

引用

收藏

页数：5

相关论文

共 44 条

[1] Magnetic anisotropy of Ga1-xMnxAs thin films on GaAs (311)A probed by ferromagnetic resonance [J].

Bihler, C. ;

Huebl, H. ;

Brandt, M. S. ;

Goennenwein, S. T. B. ;

Reinwald, M. ;

Wurstbauer, U. ;

Doeppe, M. ;

Weiss, D. ;

Wegscheider, W. .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

[2] Origin of Bulk Uniaxial Anisotropy in Zinc-Blende Dilute Magnetic Semiconductors [J].

Birowska, M. ;

Sliwa, C. ;

Majewski, J. A. ;

Dietl, T. .

PHYSICAL REVIEW LETTERS, 2012, 108 (23)

[3] Adsorption, segregation, and magnetization of a single Mn adatom on the GaAs(110) surface [J].

Cao, JX ;

Gong, XG ;

Wu, RQ .

PHYSICAL REVIEW B, 2005, 72 (15)

[4] Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature [J].

Chen, L. ;

Yan, S. ;

Xu, P. F. ;

Lu, J. ;

Wang, W. Z. ;

Deng, J. J. ;

Qian, X. ;

Ji, Y. ;

Zhao, J. H. .

APPLIED PHYSICS LETTERS, 2009, 95 (18)

[5] Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering [J].

Chen, Lin ;

Yang, Xiang ;

Yang, Fuhua ;

Zhao, Jianhua ;

Misuraca, Jennifer ;

Xiong, Peng ;

von Molnar, Stephan .

NANO LETTERS, 2011, 11 (07) :2584-2589

[6] Evidence for reversible control of magnetization in a ferromagnetic material by means of spin-orbit magnetic field [J].

Chernyshov, Alexandr ;

Overby, Mason ;

Liu, Xinyu ;

Furdyna, Jacek K. ;

Lyanda-Geller, Yuli ;

Rokhinson, Leonid P. .

NATURE PHYSICS, 2009, 5 (09) :656-659

[7] Magnetization vector manipulation by electric fields [J].

Chiba, D. ;

Sawicki, M. ;

Nishitani, Y. ;

Nakatani, Y. ;

Matsukura, F. ;

Ohno, H. .

NATURE, 2008, 455 (7212) :515-518

[8] Electric-field control of ferromagnetism in (Ga,Mn)As [J].

Chiba, D. ;

Matsukura, F. ;

Ohno, H. .

APPLIED PHYSICS LETTERS, 2006, 89 (16)

[9]

Chiba D, 2011, NAT MATER, V10, P853, DOI [10.1038/nmat3130, 10.1038/NMAT3130]

[10] Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor [J].

Chiba, D ;

Yamanouchi, M ;

Matsukura, F ;

Ohno, H .

SCIENCE, 2003, 301 (5635) :943-945

← 1 2 3 4 5 →