Improvement in surface roughness of nitrogen-implanted glassy carbon by hydrogen doping

被引:4
作者
Takahiro, K [1 ]
Ookawa, R
Kawatsura, K
Nagata, S
Nishiyama, F
Yamamoto, S
Narumi, K
Naramoto, H
Iwaki, M
机构
[1] Kyoto Inst Technol, Dept Chem & Mat Technol, Kyoto 6068585, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[3] Hiroshima Univ, Grad Sch Engn, Hiroshima 7398527, Japan
[4] Japan Atom Energy Res Inst, Takasaki 3701292, Japan
[5] Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
关键词
glassy carbon; ion implantation; scanning electron microscopy; Raman spectroscopy;
D O I
10.1016/S0925-9635(03)00108-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have demonstrated that hydrogen doping (similar to30 at.%) improves the surface roughness of N-implanted glassy carbon (GC). Prior to nitrogen implantation, D-2(+) molecular ions with energy of 10 keV were implanted in GC to a dose of 6 X 10(17) D cm(-2). Part of the doped hydrogen atoms is released by 100-keV N-2(+) implantation, but hydrogen incorporation occurs simultaneously. Consequently, the concentration of hydrogen in the N-implanted layer exceeds 20 at.% at any N implantation dose. For hydrogen-doped GC, surface roughening due to N implantation was not observed in all cases examined. This indicates that hydrogen incorporation suppresses the surface roughening. A possible mechanism for the surface roughening and its suppression by hydrogen doping is discussed in terms of chemical bonding and structure in the N-implanted layer. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1362 / 1367
页数:6
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