Dielectric properties of magnesium oxide at microwave frequency

被引：25

作者：

Chen, Jhih-Yong ^{[1
]}

Hsu, Wei-Hung ^{[2
]}

Huang, Cheng-Liang ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Inst Engn Management, Tainan 70101, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 504卷 / 01期

关键词：

Crystal growth; Dielectric response; MG(ZR0.05TI0.95)O-3 CERAMICS; SINTERING TEMPERATURE; CRYSTAL-STRUCTURE;

D O I：

10.1016/j.jallcom.2010.05.114

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

To understand the role of a residual MgO phase plays inside a ceramic body, a simple magnesium oxide ceramics was prepared to investigate its microwave dielectric properties. The epsilon(r) and tau(f) values of specimens using simple MgO only vary in a small range at the investigated temperatures (1400-1550 degrees C) implying they are not sensitive to the sintering temperature. However, the Q x f is strongly related to the density of the ceramics and a high Q x f of similar to 113,600 GHz can be achieved by sintering the specimen at 1490 degrees C for 4 h. It indicates MgO may exist as a low-loss dielectric inside a dense ceramic body at microwave frequency. (C) 2010 Published by Elsevier B.V.

引用

页码：284 / 287

页数：4

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