Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
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作者:
Lee, Changgu
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Columbia Univ, Dept Mech Engn, New York, NY 10027 USAKyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea
Lee, Changgu
[2
]
Yan, Hugen
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Columbia Univ, Dept Phys, New York, NY 10027 USAKyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea
Yan, Hugen
[3
]
Brus, Louis E.
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Columbia Univ, Dept Chem, New York, NY 10027 USAKyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea
Brus, Louis E.
[4
]
Heinz, Tony F.
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机构:
Columbia Univ, Dept Phys, New York, NY 10027 USA
Columbia Univ, Dept Elect Engn, New York, NY 10027 USAKyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea
Heinz, Tony F.
[3
,5
]
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Hone, James
[2
]
Ryu, Sunmin
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Kyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South KoreaKyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea
Ryu, Sunmin
[1
]
机构:
[1] Kyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea
[2] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA
[3] Columbia Univ, Dept Phys, New York, NY 10027 USA
[4] Columbia Univ, Dept Chem, New York, NY 10027 USA
[5] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
Molybdenum disulfide (MoS2) of single- and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic force microscopy. Two Raman modes, E-2g(1) and A(1g), exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime.