Low threshold current density operation of GaInAsP/InP lasers with strain-compensated multiple-layered wirelike active regions

In order to suppress the occurrence of nonradiative recombination traps during an etching and regrowth process, whose origin was considered to be large latticemismatch, a partially strain-compensated five-quantum-well structure was used for 1.5 mum GaInAsP/InP lasers with wirelike active regions (wire widths of 43 nm and 70 nm) fabricated by electron beam lithography, CH4/H-2 reactive-ion etching and organo-metallic vapor-phase-epitaxial regrowth. As a result, we realized wirelike lasers with wire widths of 43 nm with a threshold current lower than those of quantum film lasers prepared on the same wafer at temperatures up to 85 degreesC, for the first time.