A Robust Low Phase Noise and Wide Tuning Range Ku band Sub-Integer frequency synthesizer for E-Band Backhaul Transceivers

被引：0

作者：

Levinger, R. ^{[1
]}

Katz, O. ^{[1
]}

Vovnoboy, J. ^{[1
]}

Ben-Yishay, R. ^{[1
]}

Carmon, R. ^{[1
]}

Shienman, B. ^{[1
]}

Mazor, N. ^{[1
]}

Elad, D. ^{[1
]}

机构：

[1] Haifa Univ Campus, IBM Haifa Labs, IL-31905 Haifa, Israel

来源：

2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2015年

关键词：

voltage controlled oscillator (VCO); frequency synthesizer; sub-integer; low phase noise; SiGe; E-band; K-u band; pmos bulk; Colpitts;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a Ku band sub-integer frequency synthesizer designed in IBM 0.13um SiGe BiCMOS8hp for E-band backhaul transceivers. To improve phase noise a Gm boosted Colpitts topology was used together with a 4 bit capacitor bank for wide tuning range. Utilizing a sub-integer phase rotating divider the synthesizer realizes 132 channels with a 27.78 MHz resolution, covering 15.583 - 19.11 when using a 55.56 MHz reference. Phase noise is lower than -133 dBc/Hz at 10MHz offset, while reference and sub-integer spurs are lower than -56dBc. The synthesizer is robust to temperature variation within -40 degrees C to 85 degrees C.

引用

页码：909 / 912

页数：4

共 32 条

[31] Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz
Yoshioka, Takaaki
Harauchi, Kenji
Sugitani, Takumi
Maehara, Hiroaki
Yamasaki, Takashi
Ichinohe, Hiroaki
Miyashita, Miyo
Yamamoto, Kazuya
Goto, Seiki
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (09) : 2635 - 2646
[32] A X-band frequency synthesizer with 2-bit control mode is implemented in standard 0.18-μm 1P6M CMOS process. A cascoded topology of voltage control oscillator (VCO) and first stage current mode logic (CML) divider is adopted for current reuse, low power, and robust tracking between VCO and the frequency divider. The measured in-band phase noise of the synthesizer is-75.06 dBc/Hz at a frequency offset of 100 kHz and out-of-band phase noise is-119.8 dBc/Hz at a frequency offset of 10 MHz. The total power consumption is 36.75 mW. The chip size is 0.745 x 0.76mm2.
Tsai, Jeng-Han
Chao, Chia-Hsiang
Shih, Hung-Da
2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), 2012, : 1226 - 1228

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