Effect of oxygen vacancies on photoluminescence and electrical properties of (200) oriented fluorine-doped SnO2 films

被引：27
|
作者：
Wang, Xuan [1 ]
Di, Qingyin [1 ]
Wang, Xiaolong [1 ]
Zhao, Hongli [1 ]
Liang, Bo [1 ]
Yang, Jingkai [1 ]
机构：
[1] Yanshan Univ, Coll Mat Sci & Engn, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2019年 / 250卷
基金：
中国国家自然科学基金;
关键词：
Fluorine-doped tin oxide films; Oxygen vacancies; Resistivity; Photoluminescence properties; OXIDE THIN-FILMS; PHYSICAL-PROPERTIES; SUBSTRATE; SPECTROSCOPY;
D O I：
10.1016/j.mseb.2019.114433
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline fluorine-doped SnO2 (FTO) films have been deposited on glass substrate by ultrasonic spray pyrolysis at 500 degrees C. The effects of F/Sn atom ratio in precursor solution on the structural, optical and electrical properties of FTO films have been investigated. The XRD results indicate that all films consist of polycrystalline cassiterite tetragonal particles with obviously (2 0 0) preferred orientations. SEM images present that all the films consist of uniform, clear and sharp edge shaped pyramid particles. The film prepared with F/Sn = 1 in precursor solution possess the UV-vis transmittance about 70%, the lowest resistivity of 3.50 x 10(-4) Omega.cm and the minimum value of [O-I]/[O-II] (oxygen atom at different condition determined by XPS) of 0.99 which can be contributed to the improved conductivity. In the room temperature photoluminescence (PL) spectra, there are four intense emission bands corresponding to defect of different oxygen vacancy states in FTO films.
引用
收藏
页数：7
相关论文
共 50 条
  • [21] Optical and Structural Characterization of Fluorine-Doped SnO2 Thin Films Prepared by Spray Ultrasonic
    Abbas, Soumaia
    Ben Haoua, Atman
    Ben Haoua, Boubaker
    Rahal, Achour
    JOURNAL OF NEW TECHNOLOGY AND MATERIALS, 2014, 4 (01) : 106 - 111
  • [22] Fluorine-doped SnO2 thin films deposited on polymer substrate for flexible transparent electrodes
    Muthukumar, A.
    Giusti, G.
    Jouvert, M.
    Consonni, V.
    Bellet, D.
    THIN SOLID FILMS, 2013, 545 : 302 - 309
  • [23] Characteristic of low resistivity fluorine-doped SnO2 thin films grown by Spray Pyrolysis
    Department of Electrical and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
    Jpn. J. Appl. Phys., 5 PART 3
  • [24] First principle study on the electronic structure of fluorine-doped SnO2
    Xu, Jian
    Huang, Shuiping
    Wang, Zhanshan
    SOLID STATE COMMUNICATIONS, 2009, 149 (13-14) : 527 - 531
  • [25] Chemical vapor synthesis of fluorine-doped SnO2 (FTO) nanoparticles
    Suffner, Jens
    Agoston, Peter
    Kling, Jens
    Hahn, Horst
    JOURNAL OF NANOPARTICLE RESEARCH, 2010, 12 (07) : 2579 - 2588
  • [26] Role of oxygen vacancies in tuning magnetic properties of Co-doped SnO2 insulating films
    Liu, X. F.
    Sun, Y.
    Yu, R. H.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [27] Chemical vapor synthesis of fluorine-doped SnO2 (FTO) nanoparticles
    Jens Suffner
    Péter Ágoston
    Jens Kling
    Horst Hahn
    Journal of Nanoparticle Research, 2010, 12 : 2579 - 2588
  • [28] ELECTRICAL AND OPTICAL-PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED FLUORINE DOPED SNO2 FILMS
    REDDY, SR
    MALLIK, AK
    JAWALEKAR, SR
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1986, 96 (02): : K191 - K194
  • [29] Effect of fluorine doping on structural, electrical and optical properties of sprayed SnO2 thin films
    Anna Univ, Chennai, India
    J Cryst Growth, 3-4 (369-373):
  • [30] Effect of fluorine doping on structural, electrical and optical properties of sprayed SnO2 thin films
    Shanthi, S
    Anuratha, H
    Subramanian, C
    Ramasamy, P
    JOURNAL OF CRYSTAL GROWTH, 1998, 194 (3-4) : 369 - 373
12345