Interpretation of radiation-induced phenomena in chalcogenide glasses of Ge-Sb-S system using free volume and covalent chemical bonds concepts

被引：5

作者：

Kovalskiy, A

Kavetskyy, T

Plewa, J

Shpotyuk, O

机构：

[1] SRC Carat, Inst Mat, UA-79031 Lvov, Ukraine

[2] Natl Univ Lviv Polytech, Inst Telecommun Radioelect & Elect Engn, UA-79031 Lvov, Ukraine

[3] Univ Appl Sci, Fachhsch Munster, D-48565 Steinfurt, Germany

[4] Pedag Univ, Inst Phys, PL-42201 Czestochowa, Poland

来源：

SOLID STATE CHEMISTRY V | 2003年 / 90-91卷

关键词：

chalcogenide; glasses; amorphous; free volume; covalent bonds;

D O I：

10.4028/www.scientific.net/SSP.90-91.241

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of gamma-irradiation (Co-60 source, 1.25 MeV energy, 3 MGy dose) on the optical properties of Ge-Sb-S system of the pseudobinary "stoichiometric" Sb2S3-GeS2 and non-stoichiometric Sb2S3-Ge2S3 cut-sections in the fundamental absorption edge region is studied. The analysis of the observed radiation-induced optical effects shows that for their interpretation the approach based on free volume and covalent chemical bonds concepts is adequately suitable.

引用

页码：241 / 246

页数：6

共 16 条

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