Photoinduced absorption edge shift of As20Se60Tl20 films

被引：35

作者：

El-Denglawey, A. ^{[1
]}

Dongol, M. ^{[1
]}

El-Nahass, M. M. ^{[2
]}

机构：

[1] S Valley Univ, Fac Sci, Dept Phys, Qena 83523, Egypt

[2] Ain Shams Univ, Fac Educ, Dept Phys, Cairo, Egypt

来源：

JOURNAL OF LUMINESCENCE | 2010年 / 130卷 / 05期

关键词：

Chalcogenide glasses; Photoinduced phenomena; Amorphous films; Band gap light illumination; Photobleaching; AMORPHOUS AS20SE80-XTLX FILMS; OPTICAL BAND-GAP; THIN-FILMS; ELECTRICAL-PROPERTIES; CHALCOGENIDE GLASSES; TL ADDITION; CONDUCTIVITY; THICKNESS; SYSTEMS; AS2SE3;

D O I：

10.1016/j.jlumin.2009.11.036

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

As20Se60Tl20 bulk material was prepared firstly then thermal evaporation method was used to prepare As20Se60Tl20 films. Illumination effect at room temperature for the mentioned films has been studied within the homogeneous glass-forming region. The prepared film samples were amorphous, this is depicted by X-ray chart. Optical properties have been studied using spectrophotometric measurements. The absorption edge was shifted to shorter wavelengths due to light exposure or photobleaching effect. It was found that the extinction coefficient and the optical band gap have opposite character after illumination. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：801 / 804

页数：4

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