Repair of UV damage in the fission yeast Schizosaccharomyces pombe

被引:39
作者
McCready, SJ
Osman, F
Yasui, A
机构
[1] Univ Oxford, Dept Biochem, Oxford OX1 3QU, England
[2] Tohoku Univ, Inst Dev Aging & Canc, Sendai, Miyagi 9808575, Japan
基金
英国惠康基金;
关键词
yeast; repair of UV damage; excision repair; ultraviolet; caffeine; recombination repair; uvde; UVER; Schizosaccharomyces pombe;
D O I
10.1016/S0027-5107(00)00050-6
中图分类号
Q81 [生物工程学(生物技术)]; Q93 [微生物学];
学科分类号
071005 ; 0836 ; 090102 ; 100705 ;
摘要
This review is concerned with repair and tolerance of UV damage in the fission yeast, Schizosaccharomyces pombe and with the differences between Sch. pombe and budding yeast, Saccharomyces cerevisiae in their response to UV irradiation. Sch. pombe is not as sensitive to ultra-violet radiation as Sac. cerevisiae nor are any of its mutants as sensitive as the most sensitive Sac. cerevisiae mutants. This can be explained in part by the fact that Sch. pombe, unlike budding yeast or mammalian cells, has an extra pathway (UVER) for excision of UV photoproducts in addition to nucleotide excision repair (NER). However, even in mutants lacking this additional pathway, there are significant differences between the two yeasts. Sch. pombe mutants that lack the alternative pathway are still more W-resistant than wild-type Sac. cerevisiae; recombination mutants are significantly UV sensitive (unlike their Sac. cerevisiae equivalents); mutants lacking the second pathway are sensitized to UV by caffeine; and checkpoint mutants are relatively more sensitive than the budding yeast equivalents. In addition, Sch. pombe has no photolyase. Thus, the response to UV in the two yeasts has a number of significant differences, which are not accounted for entirely by the existence of two alternative excision repair pathways. The long G2 in Sch.. pombe, its well-developed recombination pathways and efficient cell cycle checkpoints are all significant components in survival of UV damage. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:197 / 210
页数:14
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