Influence of amorphization-recrystallization processes on distribution of selenium and oxygen atoms implanted in silicon

被引：2

作者：

Tishkovsky, E ^{[1
]}

Feklistov, K ^{[1
]}

Taskin, A ^{[1
]}

Zatolokin, M ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

VACUUM | 2003年 / 70卷 / 2-3期

关键词：

silicon; implantation; oxygen; selenium; amorphization; annealing;

D O I：

10.1016/S0042-207X(02)00634-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Common features of oxygen and selenium atoms' redistribution in silicon during the high dose implantation and subsequent annealing are discussed. In both cases, the formation of two maximums on the resulting impurity profiles is observed. The first maximum is situated at the depth, coincided well with the mean projected range. The second maximum is situated deeper behind the first one. In case of oxygen implantation, the position of the second maximum correlates with the depth, where the calculated (TRIM-98) density of energy, transferred to recoils, is equal to 2.3 x 10(21) keV/cm(3). This value is close to the critical threshold value, required for the formation of silicon amorphous layer. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：153 / 156

页数：4

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