Growth of submicron heavily doped silicon layers of lightly doped silicon by RPCVD

被引：0
|
作者：
Arora, RS [1 ]
Venkateswaran, R [1 ]
Haldar, T [1 ]
Gupta, SK [1 ]
Kumar, P [1 ]
Kesavan, R [1 ]
机构：
[1] SOLID STATE PHYS LAB,DELHI,INDIA
来源：
SEMICONDUCTOR DEVICES | 1996年 / 2733卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
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页码：347 / 349
页数：3
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