Growth of submicron heavily doped silicon layers of lightly doped silicon by RPCVD

被引：0

作者：

Arora, RS ^{[1
]}

Venkateswaran, R ^{[1
]}

Haldar, T ^{[1
]}

Gupta, SK ^{[1
]}

Kumar, P ^{[1
]}

Kesavan, R ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI,INDIA

来源：

SEMICONDUCTOR DEVICES | 1996年 / 2733卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：347 / 349

页数：3

共 50 条

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