Atomic-like properties of semiconductor quantum dots

被引:59
作者
Tarucha, S
Austing, DG
Honda, T
van der Hage, R
Kouwenhoven, LP
机构
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 24301, Japan
[2] Delft Univ Technol, Dept Appl Phys, NL-2600 GA Delft, Netherlands
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期
关键词
single electron tunneling; Coulomb blockade; vertical dot; double-barrier structure; resonant tunneling; artificial atom; quantum dot; shell structure; Hund's rule;
D O I
10.1143/JJAP.36.3917
中图分类号
O59 [应用物理学];
学科分类号
摘要
We use a gated submicron double-barrier resonant tunneling structure to study transport properties of a semiconductor quantum dot containing a tunable number of electrons starting from zero. At zero magnetic field the addition energy has large maxima for special numbers of electrons in the dot, reflecting a shell structure of electronic states in a circular dot with a harmonic lateral potential. As a function of magnetic field, current peaks evolve in pairs. This arises from the antiparallel filling of spin-degenerate states. Close to zero magnetic field, however, this pairing is rearranged to favour the filling of states with parallel spins in line with Hund's rule. These observations demonstrate that the electronic spectrum for our quantum dots is analogous to that of real atoms. When the dot has asymmetry in the lateral shape, the addition energy spectrum is readily modified reflecting the disruption of the shell structure.
引用
收藏
页码:3917 / 3923
页数:7
相关论文
共 25 条
  • [1] N-ELECTRON GROUND-STATE ENERGIES OF A QUANTUM-DOT IN MAGNETIC-FIELD
    ASHOORI, RC
    STORMER, HL
    WEINER, JS
    PFEIFFER, LN
    BALDWIN, KW
    WEST, KW
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (04) : 613 - 616
  • [2] Electrons in artificial atoms
    Ashoori, RC
    [J]. NATURE, 1996, 379 (6564) : 413 - 419
  • [3] A new design for submicron double-barrier resonant tunneling transistors
    Austing, DG
    Honda, T
    Tarucha, S
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (03) : 388 - 391
  • [4] SHARP AND SMOOTH BOUNDARIES OF QUANTUM HALL LIQUIDS
    CHAMON, CD
    WEN, XG
    [J]. PHYSICAL REVIEW B, 1994, 49 (12): : 8227 - 8241
  • [5] Darwin CG, 1931, P CAMB PHILOS SOC, V27, P86
  • [6] GATED RESONANT TUNNELING DEVICES
    DELLOW, MW
    BETON, PH
    HENINI, M
    MAIN, PC
    EAVES, L
    BEAUMONT, SP
    WILKINSON, CDW
    [J]. ELECTRONICS LETTERS, 1991, 27 (02) : 134 - 136
  • [7] ETO M, COMMUNICATION
  • [8] Note to the Quantification of the harmonic Oscillator in a Magnetic Field
    Fock, V.
    [J]. ZEITSCHRIFT FUR PHYSIK, 1928, 47 (5-6): : 446 - 448
  • [9] VARIABLE-AREA RESONANT TUNNELING DIODES USING IMPLANTED GATES
    GOODINGS, CJ
    CLEAVER, JRA
    AHMED, H
    [J]. ELECTRONICS LETTERS, 1992, 28 (16) : 1535 - 1537
  • [10] CONFINEMENT AND SINGLE-ELECTRON TUNNELING IN SCHOTTKY-GATED, LATERALLY SQUEEZED DOUBLE-BARRIER QUANTUM-WELL HETEROSTRUCTURES
    GUERET, P
    BLANC, N
    GERMANN, R
    ROTHUIZEN, H
    [J]. PHYSICAL REVIEW LETTERS, 1992, 68 (12) : 1896 - 1899