Frequency limits of InP-based integrated circuits

被引：17

作者：

Rodwell, Mark ^{[1
]}

Lind, E. ^{[1
]}

Griffith, Z. ^{[1
]}

Bank, S. R. ^{[2
]}

Crook, A. M. ^{[1
]}

Singisetti, U. ^{[1
]}

Wistey, M. ^{[1
]}

Burek, G. ^{[1
]}

Gossard, A. C. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, ECE Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Texas Austin, Dept ECE, Austin, TX 78712 USA

来源：

2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年

关键词：

D O I：

10.1109/ICIPRM.2007.380676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We examine the limits in scaling of InP-based bipolar and field effect transistors for increased device bandwidth. With InP-based HBTs, emitter and base contact resistivities and IC thermal resistance are the major limits to increased device bandwidth; devices with 1-1.5 THz simultaneous f(tau) and f(max) are feasible. Major challenges faced in developing either InGaAs HEMTs having THz cutoff frequencies or InGaAs-channel MOSFETs having drive current consistent with the 22 nm ITRS objectives include the low two-dimensional effective density of states and the high bound state energies in narrow quantum wells.

引用

页码：9 / 13

页数：5

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