Quantum simulation of nano-scale Schottky barrier MOSFETs

被引：0

作者：

Shin, M ^{[1
]}

Jang, M ^{[1
]}

Lee, S ^{[1
]}

机构：

[1] Informat & Commun Univ, Sch Engn, Taejon 305714, South Korea

来源：

2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY | 2004年

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：396 / 398

页数：3

共 7 条

[1] A computational study of thin-body, double-gate, Schottky barrier MOSFETs [J].

Guo, J ;

Lundstrom, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (11) :1897-1902

[2] NUMERICAL-SIMULATION OF TUNNEL EFFECT TRANSISTORS EMPLOYING INTERNAL FIELD-EMISSION OF SCHOTTKY-BARRIER JUNCTION [J].

HATTORI, R ;

SHIRAFUJI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :612-618

[3] Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm [J].

Huang, CK ;

Zhang, WE ;

Yang, CH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) :842-848

[4] Simulation of Schottky barrier tunnel transistor using simple boundary condition [J].

Jang, MJ ;

Kang, K ;

Lee, S ;

Park, K .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2718-2720

[5] Self-consistent 2-D model for quantum effects in n-MOS transistors [J].

Spinelli, AS ;

Benvenuti, A ;

Pacelli, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (06) :1342-1349

[6] Iteration scheme for the solution of the two-dimensional Schrodinger-Poisson equations in quantum structures [J].

Trellakis, A ;

Galick, AT ;

Pacelli, A ;

Ravaioli, U .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :7880-7884

[7] SILICON FIELD-EFFECT TRANSISTOR BASED ON QUANTUM TUNNELING [J].

TUCKER, JR ;

WANG, CL ;

CARNEY, PS .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :618-620

← 1 →