Determination of diffusion lengths of minority carriers in Cd1-xZnxTe (x≈0.04) by the EBIC method

被引：10
作者：
Franc, J
Belas, E
Toth, AL
Ivanov, YM
Sitter, H
Moravec, P
Hoschl, P
机构：
[1] Charles Univ, Inst Phys, CZ-12116 Prague 2, Czech Republic
[2] Hungarian Acad Sci, Tech Phys Res Inst, H-1047 Budapest, Hungary
[3] Johannes Kepler Univ, Inst Expt Phys, A-4040 Linz, Austria
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 03期
关键词：
D O I：
10.1088/0268-1242/13/3/011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diffusion lengths of minority carriers in Cd1-xZnxTe (x approximate to 0.04) single crystals produced by the vertical gradient freezing method were studied. Au evaporated area was used as a Schottky barrier. Electron beam induced current images in the scanning electron microscope were used for an evaluation of minority carrier diffusion lengths at 300 K in different samples.
引用
收藏
页码：314 / 317
页数：4
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