Determination of diffusion lengths of minority carriers in Cd1-xZnxTe (x≈0.04) by the EBIC method

被引：10
作者：
Franc, J
Belas, E
Toth, AL
Ivanov, YM
Sitter, H
Moravec, P
Hoschl, P
机构：
[1] Charles Univ, Inst Phys, CZ-12116 Prague 2, Czech Republic
[2] Hungarian Acad Sci, Tech Phys Res Inst, H-1047 Budapest, Hungary
[3] Johannes Kepler Univ, Inst Expt Phys, A-4040 Linz, Austria
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 03期
关键词：
D O I：
10.1088/0268-1242/13/3/011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diffusion lengths of minority carriers in Cd1-xZnxTe (x approximate to 0.04) single crystals produced by the vertical gradient freezing method were studied. Au evaporated area was used as a Schottky barrier. Electron beam induced current images in the scanning electron microscope were used for an evaluation of minority carrier diffusion lengths at 300 K in different samples.
引用
收藏
页码：314 / 317
页数：4
相关论文
共 50 条
  • [31] Detection characterization of Cd1-xZnxTe detectors for x-ray linear arrays
    Giakos, GC
    Vedantham, S
    Suryanarayanan, S
    Chowdhury, S
    Guntupalli, R
    Odogba, J
    Dasgupta, A
    Pillai, B
    Endorf, RJ
    PHYSICS OF MEDICAL IMAGING, 1998, 3336 : 537 - 545
  • [32] X-ray irradiation effects on the trapping properties of Cd1-xZnxTe detectors
    Fraboni, B.
    Pasquini, L.
    Castaldini, A.
    Cavallini, A.
    Siffert, P.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (09)
  • [33] Acceptor defects and annealing behavior in indium doped Cd1-xZnxTe (x>0.7)
    Suzuki, K
    Inagaki, K
    Seto, S
    Tsubono, I
    Kimura, N
    Sawada, T
    Imai, K
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 388 - 391
  • [34] Chapter 9 Cd1-xZnxTe Spectrometers for Gamma and X-Ray Applications
    James, R.B.
    Schlesinger, T.E.
    Lund, Jim
    Schieber, Michael
    Semiconductors and Semimetals, 1995, 43 (0C) : 335 - 381
  • [35] Investigation of Cd1-xZnxTe composition inhomogeneity at crystal growth by AHP-method
    Marchenko, Marina P.
    Golyshev, Vladimir D.
    Bykova, Svetlana V.
    JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) : 193 - 198
  • [36] Purification of Cd1-xZnxTe crystals from Te inclusions by hot zone method
    Solodin, S.
    Dremlyuzhenko, S.
    Kolisnik, M.
    Kanak, A.
    Rarenko, A.
    Zakharuk, Z.
    Fochuk, P.
    FUNCTIONAL MATERIALS, 2020, 27 (03): : 575 - 580
  • [37] Effects of Cd compensation on the photoluminescence of Cd1-xZnxTe single crystals grown by the modified Bridgman method
    Yang, G.
    Jie, W. Q.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 85 (04): : 457 - 460
  • [38] Eddy current determination of the electrical conductivity-temperature relation of Cd1-xZnxTe alloys
    Wadley, HNG
    Choi, BW
    JOURNAL OF CRYSTAL GROWTH, 1997, 172 (3-4) : 323 - 336
  • [39] Effects of Cd compensation on the photoluminescence of Cd1-xZnxTe single crystals grown by the modified Bridgman method
    G. Yang
    W.Q. Jie
    Applied Physics A, 2006, 85 : 457 - 460
  • [40] X-ray detection properties of polycrystalline Cd1-xZnxTe detectors for digital radiography
    Kang, SS
    Park, JK
    Lee, DG
    Mun, CW
    Kim, JH
    Nam, SH
    MEDICAL IMAGING 2003: PHYSICS OF MEDICAL IMAGING, PTS 1 AND 2, 2003, 5030 : 853 - 860
12345