Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

被引:15
作者
Houchens, Brent C. [1 ]
Becla, Piotr [2 ]
Tritchler, Stephanie E. [1 ]
Goza, Andres J. [1 ]
Bliss, David F. [3 ]
机构
[1] Rice Univ, Houston, TX 77251 USA
[2] Solid State Sci Corp, Nashua, NH USA
[3] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA USA
关键词
Segregation; Growth from melt; Antimonides; Semiconducting ternary compounds; ALTERNATING MAGNETIC-FIELD; INTERFACE; ALLOYS; GASB; GAAS;
D O I
10.1016/j.jcrysgro.2009.12.051
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Results from the growth of bulk Ga(1-x)In(x)Sb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1090 / 1094
页数:5
相关论文
共 15 条
[1]   CONTROL OF INTERFACE SHAPE IN VERTICAL BRIDGMAN-STOCKBARGER TECHNIQUE [J].
CHANG, CE ;
WILCOX, WR .
JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) :135-140
[2]   III-V Ternary bulk substrate growth technology: a review [J].
Dutta, PS .
JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :106-112
[3]  
Flemings M.C, 1974, Solidification Processing
[4]  
FOSTER LM, 1971, J ELECTROCHEM SOC, V118, P1175, DOI 10.1149/1.2408276
[5]  
Glazov V.M., 1969, LIQUID SEMICONDUCTOR
[6]   Forced convection induced thermal fluctuations at the solid-liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga1-xInxSb bulk crystals [J].
Kim, HJ ;
Chandola, A ;
Bhat, R ;
Dutta, PS .
JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) :450-457
[7]   Growth of GaInSb concentrated alloys under alternating magnetic field [J].
Mitric, A. ;
Duffar, T. ;
Corregidor, V. ;
Alves, L. C. ;
Barradas, N. P. .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) :1424-1432
[8]   Growth of Ga(1-x)InxSb alloys by Vertical Bridgman technique under alternating magnetic field [J].
Mitric, A ;
Duffar, T ;
Diaz-Guerra, C ;
Corregidor, V ;
Alves, LC ;
Garnier, C ;
Vian, G .
JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) :224-229
[9]  
Panish M.B., 1972, Prog. Solid State Chem, V7, P39
[10]   Control of GaInSb alloy composition grown from ternary solution [J].
Tanaka, A ;
Yoneyama, T ;
Kimura, M ;
Sukegawa, T .
JOURNAL OF CRYSTAL GROWTH, 1998, 186 (03) :305-308