Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

被引：15

作者：

Houchens, Brent C. ^{[1
]}

Becla, Piotr ^{[2
]}

Tritchler, Stephanie E. ^{[1
]}

Goza, Andres J. ^{[1
]}

Bliss, David F. ^{[3
]}

机构：

[1] Rice Univ, Houston, TX 77251 USA

[2] Solid State Sci Corp, Nashua, NH USA

[3] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 08期

关键词：

Segregation; Growth from melt; Antimonides; Semiconducting ternary compounds; ALTERNATING MAGNETIC-FIELD; INTERFACE; ALLOYS; GASB; GAAS;

D O I：

10.1016/j.jcrysgro.2009.12.051

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Results from the growth of bulk Ga(1-x)In(x)Sb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1090 / 1094

页数：5

共 15 条

[1] CONTROL OF INTERFACE SHAPE IN VERTICAL BRIDGMAN-STOCKBARGER TECHNIQUE [J].