The interface model of photoluminescence of carbonized porous silicon

In this paper the interface model of photoluminescence of the carbonized porous silicon is discussed. The model includes the SiOx, and SixOyC1-x-y interface layers and the p-Si-p-SiC heterojunction of nanocrystallites. The radiative recombination of the excited carriers occurs in the interface layers whose band gaps are independent of the Si and SiC nanocrystallite sizes. This leads to the fixation of the "red" and "blue-green" photoluminescence bands near 1.8 and 2.4 eV. Monitoring of the nanocrystallite sizes was carried out by X-ray electron microscopy and scanning probe microscopy.