Thermoelectric Properties and Carrier Localization in Ultrathin Layer of Nb-Doped MoS2

被引：4

作者：

Pham Xuan Thi ^{[1
]}

Miyata, Masanobu ^{[1
]}

Huynh Van Ngoc ^{[1
]}

Pham Tien Lam ^{[2
]}

Nguyen Thanh Tung ^{[1
]}

Muruganathan, Manoharan ^{[1
]}

Phan Trong Tue ^{[1
]}

Akabori, Masashi ^{[1
]}

Chi, Dam Hieu ^{[2
]}

Mizuta, Hiroshi ^{[1
]}

Takamura, Yuzuru ^{[1
]}

Koyano, Mikio ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, 1-1 Asahidai, Nomi, Ishikawa 9231292, Japan

[2] Japan Adv Inst Sci & Technol, Sch Knowledge Sci, 1-1 Asahidai, Nomi, Ishikawa 9231292, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2018年 / 255卷 / 09期

基金：

日本学术振兴会;

关键词：

first-principles calculations; MoS2; thermoelectric properties; ultrathin layers; weak localization; OF-FLIGHT EXPERIMENT; WEAK-LOCALIZATION; FIGURE; MERIT;

D O I：

10.1002/pssb.201800125

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thermoelectric properties of Nb-doped MoS2 ((Mo, Nb)S-2) ultrathin layers have been experimentally investigated. At temperatures of 300-450K, these ultrathin layers display p-type degenerate semiconducting behavior. Because of the carrier scattering and weak localization (WL) of the conduction carriers by random potential originated from stacking faults and edge roughness, electrical resistivity decreases with rising temperature. The lack of change of the Seebeck coefficient with layer thickness suggests that the modulation of spectral conductivity is cancelled, even in the WL condition. The experimentally obtained results are consistent with first principles calculations for the density of state of the pristine MoS2 and (Mo, Nb)S-2 monolayer.

引用

页数：8

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