Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs

被引：20

作者：

Hospodkova, A. ^{[1
]}

Hulicius, E. ^{[1
]}

Oswald, J. ^{[1
]}

Pangrac, J. ^{[1
]}

Mates, T. ^{[1
]}

Kuldova, K. ^{[1
]}

Melichar, K. ^{[1
]}

Simecek, T. ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague, Czech Republic

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / 582-585期

关键词：

nanostructures; metalorganic vapor phase epitaxy; arsenides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.10.157

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects of covering InAs quantum dot (QD) layer by InxGa1-xAs thin strain-reducing layer (SRL) on QD properties were studied by photoluminescence (PL) and atomic force microscopy (AFM). Samples were grown by low-pressure metalorganic vapor phase epitaxy. The In content in SRL was changed in the range 0-29%. The red shift of room temperature PL maxima from 1.28 to 1.46 mu m with increasing In content was observed. The energy difference between PL transitions of the ground state and the first excited state (Delta E-SP) was almost unchanged (similar to 85meV) up to 23% of In in SRL. AFM results show an increase of QD height and no change in QD diameter with increasing In content in SRL. This can be the cause of the red shift of emission with increasing concentration of In in SRL and the conservation of Delta E-SP. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：582 / 585

页数：4

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