Growth patterns of self-assembled InAs quantum dots near two-dimensional to three-dimensional transition

被引:53
|
作者
Colocci, M
Bogani, F
Carraresi, L
Mattolini, R
Bosacchi, A
Franchi, S
Frigeri, P
RosaClot, M
Taddei, S
机构
[1] LENS,I-50100 FLORENCE,ITALY
[2] CNR,INST MASPEC,I-43100 PARMA,ITALY
[3] UNIV FLORENCE,DIPARTIMENTO FIS,I-50125 FLORENCE,ITALY
[4] DIPARTIMENTO ENERGET,I-50134 FLORENCE,ITALY
关键词
D O I
10.1063/1.119114
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures. (C) 1997 American Institute of Physics.
引用
收藏
页码:3140 / 3142
页数:3
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