In situ gravimetric monitoring of decomposition rate on the surface of (0001) c-plane sapphire for the high temperature growth of AlN

被引：28

作者：

Akiyama, K. ^{[1
]}

Araki, T. ^{[1
]}

Murakami, H. ^{[1
]}

Kumagai, Y. ^{[1
]}

Koukitu, A. ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Chem, 2-24-16 Naka Cho, Tokyo 1848588, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674816

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The thermal stability of (0001) sapphire was investigated at atmospheric pressure using the in situ gravimetric monitoring (GM) method. The weight change of a sapphire substrate was monitored at various hydrogen partial pressures in carrier gas (PH2) at temperatures over 1200 degrees C. Although the sapphire substrate was stable up to 1450 degrees C in an inert carrier gas (PH2 = 0.0 atm), sapphire decomposition started to occur at 1200 degrees C in H-2 carrier gas (PH2 = 1.0 atm). Moreover the activation energy and order of reaction for sapphire surface decomposition changed at approximately 1300 degrees C. These results indicate that the rate-limiting reaction for sapphire decomposition shifts near 1300 degrees C. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2297 / +

页数：2

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