Fabrication and properties of AgInTe2 thin films

被引：5
作者：
Bodnar, IV
Gremenok, VF
Bente, K
Doering, T
Schmitz, W
机构：
[1] Belarussian State Univ Informat Sci & Radio Engn, Minsk 220027, BELARUS
[2] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk 220072, BELARUS
[3] Univ Leipzig, Inst Mineral Kristallog & Mat Wissensch, D-04275 Leipzig, Germany
来源：
INORGANIC MATERIALS | 2000年 / 36卷 / 10期
关键词：
D O I：
10.1007/BF02757975
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
AgInTe2 thin films were deposited onto glass substrates by pulsed laser ablation. Their structure, composition, and transmission and reflection spectra in the range 0.5 to 2.5 mum were studied. The absorption coefficient, energies of band-to-band transitions, and parameters of crystal-field and spin-orbit splittings were determined. The results obtained for the AgInTe2 films are in good agreement with the data for bulk crystals.
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页码：1000 / 1003
页数：4
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